Q-switching
Laser frequency conversion of wavelengths >1µm
Strict quality control
Offer Technical support
Fast delivery and Competitive price
Lithium Niobate (LiNbO3 or LN) is widely used as frequency doublers for wavelength>1µm, optical parametric oscillators (OPOs) pumped at 1064 nm as well as quasi-phase-matched (QPM) devices. Additionally due to its large Electro-Optic (E-O) and Acousto-Optic (A-O) coefficients, LiNbO3 crystal is the most commonly used material for Pockel cells, Q-switches and phase modulators, waveguide substrates, and surface acoustic wave (SAW) wafers, etc. Crysmit can provide LiNO3 crystals with high quality and large size for all these applications.
Chemical and Physical Properties
Crystal Structure | Trigonal,Space group R3c Point group 3m |
Lattice Parameter | a = 5.148 Å, c = 13.863 Å |
Melting Point | 1253℃ |
Curie Temperature | 1140℃ |
Mohs Hardness | 5 Mohs |
Density | 4.64 g/cm3 |
Elastic Stiffness Coefficients | CE11 = 2.33 ( × 1011 N/m2) |
CE33 = 2.77 ( × 1011 N/m2) |
Optical and Nonlinear Optical Properties
Transparency Range | 420-5200 nm |
Optical Homogeneity | ~5 ×10-5 /cm |
Refractive Indices | ne=2.146, no=2.220@1300nm |
ne=2.156, no=2.232@1064nm | |
ne=2.203, no=2.286@632.8nm | |
NLO Coefficients | d33=86 × d36 (KDP) |
d31=11.6 × d36 (KDP) | |
d22=5.6 × d36 (KDP) | |
Effective NLO Coefficients | deff (I)=d31sinθ-d22cosθsin3Φ |
deff (II)=d22 cos2θcos3Φ | |
Sellmeier Equations (λ in μm) | no2=4.9048+0.11768/(λ2-0.04750)-0.027169λ2 |
ne2=4.5820+0.099169/(λ2-0.04443)-0.02195λ2 | |
Damage Threshold | 100 MW/cm2 (10ns, 1064nm) |
Thermal and Electrical Properties of LiNbO3
Thermal Conductivity | 38 W/m/K @25 ℃ |
Thermal Expansion Coefficients (at 25℃) | //a, 2.0 × 10-6 /K |
//c, 2.2 × 10-6 /K | |
Resistivity | 2×10-6 Ω·cm @200 ℃ |
Dielectric Constants | εS11/ε0=43, εT11/ε0=78 |
εS33/ε0=28, εT33/ε0=32 | |
Piezoelectric Strain Constant | D22=2.04 × 10-11 C/N |
D33=19.22 × 10-11 C/N | |
Electro-Optic Coefficients | γT33=32pm/V, γS33=31pm/V |
γT31=10pm/V, γS31=8.6pm/V | |
γT22=6.8pm/V, γS22=3.4pm/V | |
Half-Wave Voltage, DC | |
Electrical field // z, light ⊥ z; | 3.03 KV |
Electrical field // x or y, light // z; | 4.02 KV |
Clear Aperture | Central 90% of the diameter |
Surface Quality | 20/10 to MIL-PRF-13830B |
Flatness | λ/8 @633 nm |
TWD | <λ/4 @633 nm |
Parallelism | 20 arc sec |
Perpendicularity | <15 arc min |
Angle Tolerance | ±0.5° |
Quality Warranty Period | One year under proper use |